Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1992-08-07
1994-11-08
Bowers, Jr., Charles L.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430302, 430326, G03F 738
Patent
active
053626060
ABSTRACT:
A resist exposed to a micron or sub-micron pattern of highly absorbed ion beams forms a highly crosslinked barrier layer in the exposed regions of the resist surface. The complementary surface regions are silylated in a silicon-containing reagent, and the exposed regions are then removed by a plasma etch. Pattern definition is enhanced by limiting the exposure and the silylation to the surface of the resist. The process allows feature definition below 1000 Angstroms using a relatively inexpensive single element low energy ion source.
REFERENCES:
patent: 4613398 (1986-09-01), Chiong et al.
patent: 4810601 (1989-03-01), Allen et al.
Hiraoka "Positive-Tone Polymer Pattern Fabrication By Gas Phase Surface Modification" IBM Technical Bulletin Sep. 1984, vol. 27, No. 4A, p. 2197.
Schellekens "Super: A Submicron Positive Dry Etch Resisit; a candidate for DUV-lithography" Microelectronic Engineering May 9, 1989, No. 1-4, pp. 561-566.
"Polymers for High Technology--Electronics and Photonics"--ACS Symposium Series 346, American Chemical Society, Washington, D.C. 1987, Murrae J. Bowden and S. Richard Turner, pp. 350-357.
Hartney Mark A.
Melngailis John
Shaver David C.
Bowers Jr. Charles L.
Engellenner Thomas J.
Falkoff Michael I.
Massachusetts Institute of Technology
Young Christopher G.
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