Positive resist compositions and patterning process

Details Positive resist compositions and patterning process Positive resist compositions and patterning process

2007-07-05

2010-06-01

Lee, Sin J. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S326000, C430S330000, C430S910000, C430S921000, C430S925000, C430S919000

Reexamination Certificate

active

07727704

ABSTRACT:
In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1is H, methyl or trifluoromethyl, R2and R3are alkyl, R4is a monovalent hydrocarbon group, X1is O, S or CH2CH2, X2is O, S, CH2or CH2CH2, n is 1 or 2, a1, a2, c, d1 and d2 each are from 0 to less than 1, b is from 0.01 to less than 1, and a1+a2+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.

REFERENCES:
patent: 5714625 (1998-02-01), Hada et al.
patent: 6004724 (1999-12-01), Yamato et al.
patent: 6063953 (2000-05-01), Hada et al.
patent: 6261738 (2001-07-01), Asakura et al.
patent: 6312867 (2001-11-01), Kinsho et al.
patent: 6329125 (2001-12-01), Takechi et al.
patent: 6916591 (2005-07-01), Ohsawa et al.
patent: 2005/0079446 (2005-04-01), Hatakeyama et al.
patent: 2005/0208424 (2005-09-01), Hasegawa et al.
patent: 2005/0233254 (2005-10-01), Hatakeyama et al.
patent: 2007/0231741 (2007-10-01), Nishi et al.
patent: 9-73173 (1997-03-01), None
patent: 9-90637 (1997-04-01), None
patent: 9-95479 (1997-04-01), None
patent: 9-208554 (1997-08-01), None
patent: 9-230588 (1997-09-01), None
patent: 9-301948 (1997-11-01), None
patent: 2906999 (1999-06-01), None
patent: 2000-314956 (2000-11-01), None
patent: 2000-336121 (2000-12-01), None
patent: 2005234449 (2002-09-01), None
patent: 2006-96965 (2004-04-01), None
patent: 2005-234450 (2005-09-01), None
patent: 2004/074242 (2004-09-01), None
Machine-assisted English translation of JP 2005-234449 as provided by JPO.
Machine-assisted English translation of JP2005-234450 as provided by JPO.
Koji Arimitsu et al., “Sensitivity Enhancement Of Chemical-Amplification-Type Photoimaging Materials By Acetoacetic Acid Derivatives”, Journal of Photopolymer Science and Technology, vol. 8, No. 1, (1995), pp. 43-46.
Koji Arimitsu et al., “Effect of Phenolic Hydroxyl Residues On The Improvement Of Acid-Proliferation-Type Photoimaging Materials”, Journal of Photopolymer Science and Technology, vol. 9, No. 1, (1996), p. 29 and p. 30.

Affiliated with

Also associated with

Rating

Positive resist compositions and patterning process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Positive resist compositions and patterning process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Positive resist compositions and patterning process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4158492