Positive photoresist processing with mid U-V range exposure

Details Positive photoresist processing with mid U-V range exposure Positive photoresist processing with mid U-V range exposure

1984-10-01

1986-06-24

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430189, 430192, 430193, 430165, 430330, 534557, G03F 726

Patent

active

045967636

ABSTRACT:
The invention provides a method for producing a positive working photoresist which comprises coating at least one novolak resin, and 1-naphthalenesulfonic acid, 3-diazo-3,4-dihydro-4-oxo-,4-benzoyl-1,2,3-benzenetriyl ester onto a substrate, exposing to a u.v. light source having a wavelength of less than 380 nanometers and developing with an aqueous alkaline solution.

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patent: 4125650 (1978-11-01), Chiu et al.
patent: 4409314 (1983-11-01), Buhr et al.
patent: 4467025 (1984-08-01), Goto et al.
patent: 4499171 (1985-02-01), Hosaka et al.
patent: 4576901 (1986-03-01), Stahlhofen et al.
patent: 4581321 (1986-04-01), Stahlhofen
De Forest, W. S., "Photoresist Matl's & Processes", McGraw-Hill Book Co., 1975, pp. 150-151.

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