Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-03-21
2011-10-25
Menz, Douglas (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S409000, C438S960000
Reexamination Certificate
active
08043909
ABSTRACT:
The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5·10−8S·cm−1to 10 S·cm−1, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size of 1 nm to 500 nm, the solid fraction having at least partly crystalline doped constituents which are bonded to one another via sinter necks and have sizes of 5 nm to 500 nm and a spherical and/or ellipsoidal shape, which comprise the elements silicon, germanium or an alloy of these elements, and also a process for producing a porous semiconductive structure, characterized in thatA. doped semimetal particles are obtained, and thenB. a dispersion is obtained from the semimetal particles obtained after step A, and thenC. a substrate is coated with the dispersion obtained after step B, and thenD. the layer obtained after step C is treated by means of a solution of hydrogen fluoride in water, and thenE. the layer obtained after step D is treated thermally to obtain a porous semiconductive structure.
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Brandt Martin S.
Ebbers André
Lechner Robert
Stutzmann Martin
Trocha Martin
Evonik Degussa GmbH
Menz Douglas
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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