Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-06-12
2007-06-12
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257SE21494, C438S782000
Reexamination Certificate
active
11031418
ABSTRACT:
Oxycarbosilane materials make excellent matrix materials for the formation of porous low-k materials using incorporated pore generators(porogens). The elastic modulus numbers measured for porous samples prepared in this fashion are 3–6 times higher than porous organosilicates prepared using the sacrificial porogen route. The oxycarbosilane materials are used to produce integrated circuits for use in electronics devices.
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Dubois Géraud
Hedrick James
Kim Ho-Cheol
Lee Victor
Magbitang Teddie
Everhart Caridad
International Business Machines - Corporation
Nugent Theresa O'Rourke
Rademaker Nugent & Affleck
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