Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-06-14
2005-06-14
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000
Reexamination Certificate
active
06906349
ABSTRACT:
A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.
REFERENCES:
patent: 6635925 (2003-10-01), Taniguchi et al.
Kang Myung-Koo
Kang Sook-Young
Kim Dong-Byum
Kim Hyun-Jae
Lee Su-Gyeong
Ho Tu-Tu
McGuireWoods LLP
Nelms David
Samsung Electronics Co,. Ltd.
LandOfFree
Polysilicon thin film transistor array panel and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Polysilicon thin film transistor array panel and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polysilicon thin film transistor array panel and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3505497