Polysilicon gate doping level variation for reduced leakage...

Details Polysilicon gate doping level variation for reduced leakage... Polysilicon gate doping level variation for reduced leakage...

2006-05-16

2006-05-16

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S232000, C438S301000, C438S306000, C438S532000, C438S591000

Reexamination Certificate

active

07045427

ABSTRACT:
A method for fabricating a transistor on a semiconductor substrate includes varying a polysilicon doping level near a first and second edge of a diffusion region with a polysilicon doping level of a center region of a polysilicon region.

REFERENCES:
patent: 6030861 (2000-02-01), Liu
patent: 6100143 (2000-08-01), Brown et al.
patent: 6136656 (2000-10-01), Brown et al.
patent: 6362056 (2002-03-01), Tonti et al.

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