Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-04-29
2009-12-15
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21530
Reexamination Certificate
active
07632733
ABSTRACT:
This invention discloses a semiconductor wafer for manufacturing electronic circuit thereon. The semiconductor substrate further includes an etch-back indicator that includes trenches of different sizes having polysilicon filled in the trenches and then completely removed from some of the trenches of greater planar trench dimensions and the polysilicon still remaining in a bottom portion in some of the trenches having smaller planar trench dimensions.
REFERENCES:
patent: 7452777 (2008-11-01), Kocon et al.
Chang Hong
Li Tiesheng
Tai Sung-Shan
Wang Yu
Alpha & Omega Semiconductor, Inc.
Chaudhari Chandra
Lin Bo-In
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