Polymeric insulation layer etching process and composition

Details Polymeric insulation layer etching process and composition Polymeric insulation layer etching process and composition

1982-05-06

1983-10-25

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156668, 252 795, 430317, B44C 172, C03C 1500, C03C 2506

Patent

active

044117353

ABSTRACT:
In a process for fabricating semiconductor devices having a patterned polyimide (PI) or polyimide-iso-indroquinazalinedione (PIQ) insulating layer on the device, a layer of uncured PI or PIQ resin is applied on a surface of the device. The resin layer is heated to produce a first level of partial curing in the resin layer. A photoresist is applied to the partially cured resin layer where it is to be removed. The partially cured resin layer is etched to produce the patterned layer. The patterned layer is then heated to produce a second level of partial cure, sufficient to prevent organic photoresist strippers from attacking the patterned layer. The developed photoresist is then stripped with an organic photoresist stripper, and the patterned layer heated a third time a sufficient extent to complete the curing of the PI and PIQ resin. The process desirably uses etching compositions comprising an amine etchant having the formula R--CH.sub.2 --CH.sub.2 --NH.sub.2, where R is an alkyl group having from 1 to 4 carbon atoms or an aryl group having from 6 to 12 carbon atoms, or an etchant comprising a mixture of quaternary ammonium hydroxide and an N-alkyl-pyrrolidinone. In both cases, water may be used as a solvent for the etching compositions.

REFERENCES:
patent: 3700497 (1972-10-01), Epifano et al.
patent: 3871930 (1975-03-01), Fish
patent: 4039371 (1977-08-01), Brunner et al.
IBM Technical Disclosure Bulletin, vol. 21, No. 9, Feb. 1979, Selective Etching of Polyimides and Polyamides by L. P. Brown et al., p. 3573.

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