Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-17
2007-04-17
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S311000, C257S314000, C257SE21208, C438S253000, C438S393000, C438S508000
Reexamination Certificate
active
10816259
ABSTRACT:
An embodiment of the invention reduces damage caused to a polymer ferroelectric layer in a polymer ferroelectric memory device by creating excess holes in the insulating metal nitride and/or metal oxide layers between the metal electrodes and polymer ferroelectric layer. The excess holes in the metal nitride and/or metal oxide trap electrons injected by the metal electrodes under AC bias that would otherwise damage the polymer ferroelectric layer.
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Oskarsdottir Gudbjorg H.
Renavikar Mukul P.
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