Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-10
2005-05-10
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S003000
Reexamination Certificate
active
06890813
ABSTRACT:
Embodiments in accordance with the present invention eliminate the need for a subtractive metal patterning process to pattern the electrode above a ferroelectric polymer. Instead, a selective electroless deposition process is used. A conductive polymer is used as a seed layer for the electroless plating of the metal electrode. A cost saving is provided by eliminating the chemical costs associated with conventional resist removal processing. The methods also potentially eliminate the requirement for aggressive and environmentally unsafe chemical-based photoresist removal processes.
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Andideh Ebrahim
Diana Daniel C.
Intel Corporation
Luu Chuong Anh
Schwabe Williamson & Wyatt P.C.
Smith Matthew
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