Polycrystalline SiGe junctions for advanced devices

Details Polycrystalline SiGe junctions for advanced devices Polycrystalline SiGe junctions for advanced devices

2008-06-17

2008-06-17

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21435, C257S288000

Reexamination Certificate

active

07387924

ABSTRACT:
A structure and method of fabrication for MOSFET devices with a polycrystalline SiGe junction is disclosed. Ge is selectively grown on Si while Si is selectively grown on Ge. Alternating depositions of Ge and Si layers yield the SiGe junction. The deposited layers are doped, and subsequently the dopants outdiffused into the device body. A thin porous oxide layer between the polycrystalline Ge and Si layers enhances the isotropy of the SiGe junctions.

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