Poly profile engineering to modulate spacer induced stress...

Details Poly profile engineering to modulate spacer induced stress... Poly profile engineering to modulate spacer induced stress...

2011-08-09

2011-08-09

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C438S305000, C438S308000, C257S204000, C257S369000, C257SE21632

Reexamination Certificate

active

07993997

ABSTRACT:
The present invention provides a method of inducing stress in a semiconductor device substrate by applying an ion implantation to a gate region before a source/drain annealing process. The source/drain region may then be annealed along with the gate which will cause the gate to expand in certain areas due to said ion implantation. As a result, stress caused by said expansion of the gate is transferred to the channel region in the semiconductor substrate.

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