Poly-load resistor for SRAM cell

Details Poly-load resistor for SRAM cell Poly-load resistor for SRAM cell

1998-05-19

1999-03-23

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438384, 438385, H01L 2170, H01L 218244

Patent

active

058858628

ABSTRACT:
The inventive SRAM cell has a poly-load resistor which comprises a thick supply voltage (Vcc) interconnect, a thick driver interconnect on a thin load resistance region which is electrically connected to both interconnects. The novel poly-load resistor overcomes the problem of lateral diffusion from the interconnect regions into the load region. The resulting SRAM cell has a low Vcc interconnect resistance.

REFERENCES:
patent: 4968645 (1990-11-01), Baldi et al.
patent: 5236851 (1993-08-01), Kameyama et al.
patent: 5348901 (1994-09-01), Chen et al.
patent: 5594269 (1997-01-01), Spinner, III et al.
patent: 5622884 (1997-04-01), Liu
patent: 5686338 (1997-11-01), Liu
patent: 5705418 (1998-01-01), Liu

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