Poly I spacer manufacturing process to eliminate polystringers i

Details Poly I spacer manufacturing process to eliminate polystringers i Poly I spacer manufacturing process to eliminate polystringers i

1997-12-18

2000-05-16

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438304, 438596, H01L 218247

Patent

active

060636688

ABSTRACT:
A layer of polysilicon is deposited over an oxide layer on top of a silicon substrate, with core field oxide and active regions, and patterned. An oxide mask is then added. Next, the oxide mask and the layer of polysilicon are removed from above the core field oxide regions. Next, a second layer of polysilicon is deposited and etched to form polysilicon spacers. Later, an ONO dielectric, a third polysilicon layer, a tungsten silicide layer, and SiON layers are successively formed and patterned. The polysilicon spacers effectively seal any recesses that may occur in the edges of the first polysilicon layer to prevent harboring of subsequently added polysilicon material. Accordingly, NAND-type flash memory core cells cannot be electrically shorted by polysilicon material, so called "polystringers", present in such recesses.

REFERENCES:
patent: 4488351 (1984-12-01), Momose
patent: 4521448 (1985-06-01), Sasaki
patent: 4727038 (1988-02-01), Watabe et al.
patent: 4818334 (1989-04-01), Shwartzman et al.
patent: 5015598 (1991-05-01), Verhaar
patent: 5019879 (1991-05-01), Chiu
patent: 5021848 (1991-06-01), Chiu
patent: 5108939 (1992-04-01), Manley et al.
patent: 5115288 (1992-05-01), Manley
patent: 5266509 (1993-11-01), Chen
patent: 5284784 (1994-02-01), Manley
patent: 5342801 (1994-08-01), Perry et al.
patent: 5397725 (1995-03-01), Wolstenholme et al.
patent: 5422292 (1995-06-01), Hong et al.
patent: 5427967 (1995-06-01), Sadjadi et al.
patent: 5618742 (1997-04-01), Shone et al.
patent: 5631482 (1997-05-01), Hong
patent: 5639681 (1997-06-01), Carmody et al.
patent: 5705419 (1998-01-01), Perry et al.
patent: 5789293 (1998-08-01), Cho et al.
Wolf, S., and Tauber, R., Silicon Processing for the VLSI Era, vol. 1, Lattice Press (1996) pp. 532-533.

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