Poly gate etch method and device for sonos-based flash memory

Details Poly gate etch method and device for sonos-based flash memory Poly gate etch method and device for sonos-based flash memory

2008-10-27

2011-10-04

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21210

Reexamination Certificate

active

08030165

ABSTRACT:
A method for forming flash memory devices is provided. The method includes providing a semiconductor substrate, which comprises a silicon material and has a periphery region and a cell region. The method further includes forming an isolation structure between the cell region and the periphery region. Additionally, the method includes forming an ONO layer overlying the cell region and the periphery region. Furthermore, the method includes removing the ONO layer overlying the periphery region to expose silicon material in the periphery region. The method also includes forming a gate dielectric layer overlying the periphery region, while protecting the ONO layer in the cell region. In addition, the method includes forming a polysilicon layer overlying the cell region and the periphery region.

REFERENCES:
patent: 6207502 (2001-03-01), Au et al.
patent: 6566196 (2003-05-01), Haselden et al.
patent: 7148107 (2006-12-01), Pittikoun
patent: 7732856 (2010-06-01), Sim et al.
patent: 2002/0132430 (2002-09-01), Willer et al.
patent: 2004/0056319 (2004-03-01), Kuo et al.
patent: 2004/0266206 (2004-12-01), Cleeves
patent: 2005/0093047 (2005-05-01), Goda et al.
patent: 2005/0265093 (2005-12-01), Hashimoto et al.
patent: 2008/0157164 (2008-07-01), Hong

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