Poly etch without separate oxide decap

Details Poly etch without separate oxide decap Poly etch without separate oxide decap

2005-06-28

2008-10-28

Norton, Nadine (Department: 1792)

Etching a substrate: processes

Nongaseous phase etching of substrate

C134S026000, C134S030000, C216S091000, C216S099000, C252S079500, C257S314000, C438S647000, C438S738000, C438S743000, C438S756000

Reexamination Certificate

active

07442319

ABSTRACT:
The use of an ammonium hydroxide spike to a hot tetra methyl ammonium hydroxide (TMAH) solution to form an insitu poly oxide decapping step in a polysilicon (poly) etch process, results in a single step rapid poly etch process having uniform etch initiation and a high etch selectivity, that may be used in manufacturing a variety of electronic devices such as integrated circuits (ICs) and micro electro-mechanical (MEM) devices. The etching solution is formed by adding 35% ammonium hydroxide solution to a hot 12.5% TMAH solution at about 70° C. at a rate of 1% by volume, every hour. Such an etch solution and method provides a simple, inexpensive, single step self initiating poly etch that has etch stop ratios of over 200 to 1 over underlying insulator layers and TiN layers.

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