Polishing method using chemical mechanical slurry composition

Details Polishing method using chemical mechanical slurry composition Polishing method using chemical mechanical slurry composition

2007-09-17

2011-11-01

Vinh, Lan (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C252S079100, C252S079200, C252S079300, C252S079400, C438S689000, C438S693000, C438S745000, C438S753000

Reexamination Certificate

active

08048809

ABSTRACT:
A slurry composition includes about 4.25 to about 18.5 weight percent of an abrasive, about 80 to about 95 weight percent of deionized water, and about 0.05 to about 1.5 weight percent of an additive. The slurry composition may further include a surfactant. In a polishing method using the slurry composition, a polysilicon layer may be rapidly polished, and also dishing and erosion of the polysilicon layer may be suppressed.

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