Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-11-28
2006-11-28
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S691000, C438S692000
Reexamination Certificate
active
07141501
ABSTRACT:
A polishing method and a polishing apparatus by which excess portions of a metallic film18can be removed easily and efficiently in planarizing the metallic film18by polishing and which is high in accuracy of polishing, are provided. Also, a method of manufacturing a semiconductor device by use of the polishing method and the polishing apparatus is provided. A substrate17provided with the metallic film18and a counter electrode15are disposed oppositely to each other in an electrolytic solution E, an electric current is passed to the metallic film18through the electrolytic solution E, and the surface of the metallic film18is polished with a hard pad14.
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Horikoshi Hiroshi
Komai Naoki
Nogami Takeshi
Ohtorii Hiizu
Sato Shuzo
Depke Robert J.
Doty Heather A.
Jr. Carl Whitehead
Rockey, Depke, Lyons & Kitzinger LLC
Sony Corporation
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