Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-12-11
2007-12-11
Tran, Binh X. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S693000, C438S700000, C216S089000, C216S090000
Reexamination Certificate
active
11540707
ABSTRACT:
A method for polishing a Cu film comprises contacting a Cu film formed above a semiconductor substrate with a polishing pad attached to a turntable, and supplying a first chemical liquid which promotes the polishing of the Cu film and a second chemical liquid which contains a surfactant, to the polishing pad while the turntable being rotated, thereby polishing the Cu film, while monitoring at least one of a table current of the turntable and a surface temperature of the polishing pad to detect a change in at least one of the table current of the turntable and the surface temperature of the polishing pad. The supply of the second chemical liquid is controlled in conformity with the change.
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Fukushima Dai
Minamihaba Gaku
Yamamoto Susumu
Yano Hiroyuki
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Tran Binh X.
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