Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2008-05-06
2008-05-06
Tran, Binh X. (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S693000, C216S088000, C216S089000, C252S079100, C252S079200, C051S307000, C051S308000
Reexamination Certificate
active
07368387
ABSTRACT:
A polishing composition includes fumed alumina, alumina other than fumed alumina, colloidal silica, a first organic acid, a second organic acid, an oxidizing agent, and water. When the second organic acid is citric acid, the first organic acid is preferably malic acid, while when the second organic acid is malic acid, the first organic acid is preferably citric acid. When the second organic acid is succinic acid, iminodiacetic acid, itaconic acid, maleic acid, malonic acid, crotonic acid, gluconic acid, glycolic acid, lactic acid, or mandelic acid, the first organic acid is preferably either citric acid or malic acid. The polishing composition can be suitably used for polishing the surface of a substrate for a magnetic disk.
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Owaki Toshiki
Sugiyama Hiroyasu
Uno Takanori
Angadi Maki
Fujimi Incorporated
Tran Binh X.
Vidas Arrett & Steinkraus
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