Plural treatment step process for treating dielectric films

Details Plural treatment step process for treating dielectric films Plural treatment step process for treating dielectric films

2005-09-30

2008-07-29

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S780000, C257SE21241, C257SE21242

Reexamination Certificate

active

07405168

ABSTRACT:
A method and computer readable medium for treating a dielectric film on one or more substrates includes disposing the one or more substrates in a process chamber configured to perform plural treatment processes on a dielectric film. The dielectric film is formed on at least one of said one or more substrates, wherein the dielectric film includes an initial dielectric constant having a value less than the dielectric constant of SiO2. A thermal treatment process that includes annealing the one or more substrates is performed in order to remove volatile constituents from the dielectric film on the one or more substrates and a chemical treatment process is performed on the one or more substrates, including: introducing a treating compound to the dielectric film on the one or more substrates, and heating the one or more substrates.

REFERENCES:
patent: 6576300 (2003-06-01), Berry et al.
patent: 2004-343017 (2004-12-01), None
patent: WO 02/01621 (2002-01-01), None

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