Plug strap process utilizing selective nitride and oxide etches

Details Plug strap process utilizing selective nitride and oxide etches Plug strap process utilizing selective nitride and oxide etches

1994-12-06

1996-08-13

Thomas, Tom

Fishing, trapping, and vermin destroying

437 60, 437228, H01L 218242

Patent

active

055455816

ABSTRACT:
The invention provides a method for electrically connecting a trench capacitor and a diffusion region, and also for electrically connecting a trench capacitor or a diffusion region with external circuitry in a semiconductor device. The method provides for formation of a strap or bridge contact by formation of strap holes exposing the electrical elements utilizing an oxide insulation layer and a nitride etch stop and a highly selective oxide:nitride etch and a selective nitride:oxide etch. The strap holes may then be filled with an electrical conductor.

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J. Givens et al., "Selective Dry Etching in a High Density Plasma for 0.5 .mu.m Complimentary Metal-oxide-semiconductor Technology" J. Vac. Sci. Tehnol. B 12 (1) Jan./Feb. 1994 pp. 427-432.
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