Method for manufacturing semiconductor device capacitor

Details Method for manufacturing semiconductor device capacitor Method for manufacturing semiconductor device capacitor

1994-12-28

1996-08-13

Thomas, Tom

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 218242

Patent

active

055455824

ABSTRACT:
A method for manufacturing a semiconductor device capacitor includes the steps of forming a first conductive layer on a semiconductor substrate, forming a storage node pattern on the first conductive layer, forming first conductive sidewalls on the side surfaces of the storage node pattern, removing the storage node pattern, forming material sidewalls on the side surfaces of the conductive sidewalls, forming second conductive sidewalls on the side surfaces of the material sidewalls, and removing the material sidewalls. Thus, a process simplification is achieved and capacitance is increased easily so that a high-integration memory cell can be ensured.

REFERENCES:
patent: 5061650 (1991-10-01), Dennison et al.
patent: 5084405 (1992-01-01), Fazam et al.
patent: 5102820 (1992-04-01), Chuba
patent: 5137842 (1992-08-01), Cham et al.
patent: 5164881 (1992-11-01), Ahan
patent: 5236859 (1993-08-01), Bae et al.
patent: 5278091 (1994-01-01), Fazam et al.

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