Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2007-05-08
2007-05-08
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S347000, C257S762000, C257SE21006, C257SE21094, C257SE21218, C257SE21319
Reexamination Certificate
active
11245540
ABSTRACT:
An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen
itrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof, and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen
itrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen
itrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.
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Gaudet Simon
Lavoie Christian
Ponoth Shom
Spooner Terry A.
Yang Chih-Chao
Nhu David
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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