Plating of multi-layer structures

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257SE21114, C257SE21464, C427S437000, C427S443100

Reexamination Certificate

active

11156544

ABSTRACT:
An insulating layer (5) and a conductive seed layer (6) are applied to a substrate (1) in a simple process. A photo resist with palladium chloride are provided in a bath for electrophoretic deposition onto the substrate. The photo resist is an insulator and the palladium chloride is a catalyst. The layer is heated with UV to cure it. The layer is plasma etched to expose more of the palladium chloride, which acts as a catalyst for electrodes plating of the conductive seed layer. A thicker conductive layer (7) is then electroplated onto the seed layer. These steps may be repeated for successive insulating and/or conductive layers.

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patent: 5239435 (1993-08-01), Jeffers et al.
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patent: 6238749 (2001-05-01), Willard et al.
patent: 6942901 (2005-09-01), Van Tassel et al.
patent: 2004/0151957 (2004-08-01), Brooks et al.
patent: 0239839 (1987-10-01), None
patent: 0373776 (1990-06-01), None
Electrophoretic Deposition by WWW.WIKIPEDIA.COM Search Word: Electrophoretic Deposition.

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