Plasma uniformity control for an inductive plasma source

Details Plasma uniformity control for an inductive plasma source Plasma uniformity control for an inductive plasma source

1996-07-16

1999-04-27

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

427569, 156345, 118723I, H05H 100

Patent

active

058977120

ABSTRACT:
The present invention reduces those portions of the RF induction field over areas of the wafer experiencing higher etch or deposition rates than those experienced elsewhere on the wafer. Such a controlled reduction of those portions of the RF induction field whose attenuation results in reducing non-uniformity in the etch or deposition rate distribution is obtained by incorporating a plasma uniformity control apparatus into the inductively coupled plasma reactor. The incorporated plasma uniformity control apparatus for controlling the RF induction field produced by the antenna includes one or more conductive bodies which are disposed adjacent to one or more of the radiating elements of the antenna.

REFERENCES:
patent: 5241245 (1993-08-01), Barnes et al.

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