Plasma treatment method and plasma treatment system

Details Plasma treatment method and plasma treatment system Plasma treatment method and plasma treatment system

1997-09-02

1999-07-27

Breneman, Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 61, 427569, 118708, 118723E, H05H 116

Patent

active

059285281

ABSTRACT:
A reactive gas supplied to a chamber 1 is put into plasma by supplying radio frequency power to the chamber 1 intermittently or while repeating high and low levels alternately and a specimen A in the chamber 1 is treated by the plasma. A positive pulse-like bias voltage synchronized with a period in which the radio frequency power is not supplied or a period in which low-level power is supplied is applied to the specimen A for preventing charging.

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patent: 5683538 (1997-11-01), O'Neill et al.
patent: 5779925 (1998-07-01), Hashimoto et al.

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