Plasma processing system with locally-efficient inductive...

Details Plasma processing system with locally-efficient inductive... Plasma processing system with locally-efficient inductive...

2010-12-20

2011-10-04

Hassanzadeh, Parviz (Department: 1716)

Coating apparatus

Gas or vapor deposition

With treating means

C118S7230IR, C118S7230AN, C156S345480, C315S111510

Reexamination Certificate

active

08028655

ABSTRACT:
An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source includes a segmented configuration having high and low radiation segments and produces a generally ring-shaped array of alternating high and low energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle. The antenna has concentrated conductor segments through which current flows in lengths of closely-spaced windings of a single conductor to produce high magnetic fields that couple through the high-transparency shield segments into the chamber, and alternating distributed conductor segments through which current flows in lengths of more widely-spaced windings of the conductor to produce weaker magnetic fields aligned with more opaque shield sections that couple less energy to the plasma.

REFERENCES:
patent: 2003/0111181 (2003-06-01), Wang et al.
patent: 2004/0079485 (2004-04-01), Lee et al.

Affiliated with

Also associated with

Rating

Plasma processing system with locally-efficient inductive... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing system with locally-efficient inductive..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing system with locally-efficient inductive... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4261049