Plasma processing system with locally-efficient inductive...

Details Plasma processing system with locally-efficient inductive... Plasma processing system with locally-efficient inductive...

2007-09-25

2007-09-25

Hassanzadeh, Parviz (Department: 1763)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With radio frequency antenna or inductive coil gas...

C118S7230IR, C156S345430

Reexamination Certificate

active

10717268

ABSTRACT:
An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source includes a segmented configuration having high and low radiation segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle. The antenna has concentrated conductor segments through which current flows in one or more small cross-section conductors to produce high magnetic fields that couple through the high-transparency shield segments into the chamber, while alternating distributed conductor segments, formed of large cross-section conductor portions or diverging small conductor sections, permit magnetic fields to pass through or between the conductors and deliver only weak fields, which are aligned with opaque shield sections and couple insignificant energy to the plasma. The source provides spatial control of plasma energy distribution, which aids in control of the uniformity of plasma processing across the surface of the semiconductor being processed.

REFERENCES:
patent: 6028285 (2000-02-01), Khater et al.
patent: 6237526 (2001-05-01), Brcka
patent: 6268700 (2001-07-01), Holland et al.
patent: 6273022 (2001-08-01), Pu et al.
patent: 6287435 (2001-09-01), Drewery et al.
patent: 6338313 (2002-01-01), Chan
patent: 6451161 (2002-09-01), Jeng et al.
patent: 6474258 (2002-11-01), Brcka
patent: 6495963 (2002-12-01), Bennett
patent: 6523493 (2003-02-01), Brcka
patent: 6685799 (2004-02-01), Hooshdaran et al.
patent: 6825618 (2004-11-01), Pu et al.
patent: 2001/0022157 (2001-09-01), Shin et al.
patent: 2001/0022158 (2001-09-01), Brcka
patent: 2002/0170677 (2002-11-01), Tucker et al.
patent: 2003/0006009 (2003-01-01), Todorov et al.
patent: 0 838 843 (1998-04-01), None

Affiliated with

Also associated with

Rating

Plasma processing system with locally-efficient inductive... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing system with locally-efficient inductive..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing system with locally-efficient inductive... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3759408