Plasma processing method, plasma processing apparatus, and...

Details Plasma processing method, plasma processing apparatus, and... Plasma processing method, plasma processing apparatus, and...

2005-08-05

2010-10-05

Meeks, Timothy H (Department: 1715)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C438S778000

Reexamination Certificate

active

07807234

ABSTRACT:
According to the present invention, plasma oxidation processing and plasma nitridation processing are applied at the same time to the surface of a semiconductor substrate by plasma using a microwave. After forming an insulating film by the plasma oxynitridation processing as described above, the plasma nitridation processing is further applied to the insulating film as necessary. Thereby, it is possible to form the insulating film with an excellent electrical characteristic.

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Translation of JPP010215 (filed Aug. 2, 2001) by Kazuo Yoshii supplied for U.S. Appl. No. 10/485,410 used as a translation for WO03/015151.
Gusev, J. App. Phys., V84, 5, p. 2980-2983, 1998.
Machine Translation of Kawakami (JP2000-294550).
Machine translation of Masanobu (JP2004-111739).

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