Plasma processing method, plasma processing apparatus and...

Details Plasma processing method, plasma processing apparatus and... Plasma processing method, plasma processing apparatus and...

2004-09-17

2009-08-04

Olsen, Allan (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S068000, C216S070000

Reexamination Certificate

active

07569154

ABSTRACT:
A plasma processing method in which plasma can be ignited stably with a low radio frequency power and a low gas pressure even after long time operation by applying a DC voltage of −0.5 kV, for example, from a DC power supply (118) to a lower electrode (104) before a radio frequency power is applied from a radio frequency power supply (114) to the lower electrode (104) through a matching unit112when the surface of a wafer W mounted on the lower electrode (104) disposed in a processing container (102) is subjected to a specified plasma processing with plasma of a processing gas formed by applying a radio frequency power to the processing gas introduced into the airtight processing container (102).

REFERENCES:
patent: 2004/0076762 (2004-04-01), Iijima
patent: 2005/0039773 (2005-02-01), Moriya et al.
patent: 2005/0051100 (2005-03-01), Chiang et al.

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