Plasma processing method for working the surface of...

Details Plasma processing method for working the surface of... Plasma processing method for working the surface of...

2006-08-29

2006-08-29

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S724000

Reexamination Certificate

active

07098138

ABSTRACT:
A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

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