Plasma processing method and equipment used therefor

Details Plasma processing method and equipment used therefor Plasma processing method and equipment used therefor

1995-10-26

1998-10-27

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

156345, 118723MW, 31511121, 216 71, H01L 21302, H01L 2131

Patent

active

058274359

ABSTRACT:
A plasma processing method is provided which suppresses the charge accumulation on a processing object such as a semiconductor substrate. An alternating excitation signal in the form of pulses for exciting the plasma is supplied to a reaction gas contained in a plasma chamber, each pulse having an on-period t.sub.on for supplying the excitation signal and an off-period t.sub.off for stopping the excitation signal. The off period ranges from 10 to 100 .mu.sec. The on-period may be determined as needed. An alternating bias signal for biasing the processing object is also applied to the object in the chamber. The bias signal has a frequency of at most 600 kHz. As a result, an increased number of positive and negative ions impinge the object thus increasing the processing rate and reducing the charge accumulation compared to prior art processes.

REFERENCES:
patent: 4401054 (1983-08-01), Matsuo et al.
patent: 4559100 (1985-12-01), Ninomiya et al.
patent: 4891118 (1990-01-01), Ooiwa et al.
patent: 5231057 (1993-07-01), Doki et al.
patent: 5310452 (1994-05-01), Doki et al.
patent: 5395453 (1995-03-01), Noda
patent: 5468341 (1995-11-01), Samukawa

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