Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2011-03-01
2011-03-01
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S775000, C257SE21268, C257SE21269
Reexamination Certificate
active
07897518
ABSTRACT:
According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.
REFERENCES:
patent: 6143081 (2000-11-01), Shinriki et al.
patent: 6399520 (2002-06-01), Kawakami et al.
patent: 7179754 (2007-02-01), Kraus et al.
patent: 7723241 (2010-05-01), Matsuyama et al.
patent: 2003/0232491 (2003-12-01), Yamaguchi
patent: 2002-208593 (2002-07-01), None
patent: 2002-222941 (2002-08-01), None
patent: 2003-77915 (2003-03-01), None
patent: 2004-22902 (2004-01-01), None
patent: 1998-0011767 (1998-04-01), None
patent: WO 2005/086215 (2005-09-01), None
Adachi Hikaru
Matsuyama Seiji
Nakanishi Toshio
Ozaki Shigenori
Sato Yoshihiro
Ghyka Alexander G
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tokyo Electron Limited
LandOfFree
Plasma processing method and computer storage medium does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plasma processing method and computer storage medium, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing method and computer storage medium will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2772915