Plasma processing method and apparatus using dynamic sensing...

Details Plasma processing method and apparatus using dynamic sensing... Plasma processing method and apparatus using dynamic sensing...

2005-06-28

2005-06-28

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

C216S060000, C216S067000, C438S014000, C438S016000, C156S345240, C156S345250, C156S345260

Reexamination Certificate

active

06911157

ABSTRACT:
At least one control parameter such as power supplied to a plasma, process pressure, gas flow rate, and radio frequency bias power to a wafer is changed for an extremely short time as compared with an entire plasma processing time, to the extent that such a change does not affect the result of plasma processing on the wafer, to monitor a temporal change of a plasma state which occurs at the time of changing. A signal resulting from the monitoring method is used to control or diagnose the plasma processing, thereby making it possible to accomplish miniature etching works, high quality deposition, surface processing.

REFERENCES:
patent: 4985114 (1991-01-01), Okudaira et al.
patent: 5405488 (1995-04-01), Dimitrelis et al.
patent: WO 99/14699 (1999-03-01), None

Affiliated with

Also associated with

Rating

Plasma processing method and apparatus using dynamic sensing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing method and apparatus using dynamic sensing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing method and apparatus using dynamic sensing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3475951