Plasma processing method and apparatus

Details Plasma processing method and apparatus Plasma processing method and apparatus

1996-05-30

1999-03-30

Smith, Lynette F.

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

156345, 118723I, C23F 102, C23F 108

Patent

active

058884130

ABSTRACT:
In a plasma processing method, a substrate is processed by placing the substrate on an electrode in a vacuum chamber, introducing a gas into the vacuum chamber while discharging gas from inside vacuum chamber, applying a high frequency voltage to a spiral discharge coil while keeping the vacuum chamber internally at a pressure to generate a plasma inside the vacuum chamber. At least one of the control parameters of gas type, gas flow rate, pressure, magnitudes of high frequency powers applied to the coil and the electrode, and their high frequency power frequencies is varied while the substrate is processed. The method includes a step of allowing a plasma density in-plane distribution to be controlled in accordance with the timing of varying any of the control parameters.

REFERENCES:
patent: 4451436 (1984-05-01), O'Hare
patent: 5034086 (1991-07-01), Sato
patent: 5266364 (1993-11-01), Tamura et al.
patent: 5531834 (1996-07-01), Ishizuka et al.

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