Plasma processing method and apparatus

Details Plasma processing method and apparatus Plasma processing method and apparatus

2007-04-17

2007-04-17

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C257SE21215, C257SE21218

Reexamination Certificate

active

10801551

ABSTRACT:
A Plasma processing method and apparatus exhibit excellent characteristics of reducing the amount of electric charge on a plasma-processed processing-object substrate and of preventing plasma damage and dielectric breakdown. Before the processing-object substrate is plasma-processed, top-and-bottom surfaces of the processing-object substrate are simultaneously subjected to a weak plasma in gas composed mainly of inert gas, which makes it possible to neutralize the charges on the processing-object substrate. The inert gas is any one of Ar, He, N2, H2, and vaporized H2O gas or a mixed gas of these gases.

REFERENCES:
patent: 5492862 (1996-02-01), Misumi
patent: 6703317 (2004-03-01), Cheng et al.
patent: 2003/0235994 (2003-12-01), Pan et al.
patent: 7-106314 (1995-04-01), None
patent: 3170849 (2001-03-01), None
patent: 3227812 (2001-09-01), None

Affiliated with

Also associated with

Rating

Plasma processing method and apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing method and apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing method and apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3795073