Plasma processing method and apparatus

Details Plasma processing method and apparatus Plasma processing method and apparatus

2005-06-14

2005-06-14

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S068000, C216S075000, C156S345480, C118S7230IR, C219S121430

Reexamination Certificate

active

06905625

ABSTRACT:
A plasma processing method includes exhausting the interior of a vacuum chamber while supplying gas into the vacuum chamber, and while maintaining the interior of the chamber at a desired pressure. A high-frequency power of 100 kHz to 100 MHz is applied to a coil provided in the vicinity of a dielectric window provided so as to face a substrate placed on a substrate electrode in the vacuum Thus, plasma is generated in the vacuum chamber to process the substrate or a film on the substrate by the generated plasma while particles which tend to move straight from a surface of the substrate or from a surface of the film on the substrate toward a wall surface of the dielectric window inside the vacuum chamber are kept interrupted by a metal plate.

REFERENCES:
patent: 4987284 (1991-01-01), Fujimura et al.
patent: 5690781 (1997-11-01), Yoshida et al.
patent: 11-111495 (1999-04-01), None

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