Plasma processing method and apparatus

Details Plasma processing method and apparatus Plasma processing method and apparatus

1997-04-25

2000-10-24

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

156345, 216 68, 118723R, B44C 122, C23F 102

Patent

active

06136214&

ABSTRACT:
Because of environmental pollution prevention laws, PFC (perfluorocarbon) and HFC (hydrofluorocarbon), both etching gases for silicon oxide and silicon nitride films, are expected to be subjected to limited use or become difficult to obtain in the future. To accommodate such a problem, an etching gas containing fluorine atoms is introduced into a plasma chamber. In a region where plasma etching takes place, the fluorine-containing gas plasma is made to react with solid-state carbon in order to produce a molecular chemical species such as CF.sub.4, CF.sub.2, CF.sub.3 and C.sub.2 F.sub.4 for etching. This method assures a high etching rate and high selectivity while keeping a process window wide.

REFERENCES:
patent: 5477975 (1995-12-01), Rice et al.
patent: 5556501 (1996-09-01), Collins et al.
patent: 5772832 (1998-06-01), Collins et al.

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