Plasma processing method

Details Plasma processing method Plasma processing method

1997-04-24

1999-03-30

Breneman, Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 67, H01L 2100

Patent

active

058889078

ABSTRACT:
In a plasma etching apparatus, an inactive gas and a reactive gas are supplied from a gas spouting surface of a shower head, and are turned into plasma by means of RF discharge, so that a semiconductor wafer placed on a susceptor is etched by the plasma. The inactive gas is continuously supplied from inactive gas spouting holes formed all over the gas spouting surface. The reactive gas is supplied from reactive gas spouting holes, which are formed all over the gas spouting surface and divided into a plurality of groups, by repeatedly scanning the groups in a time-sharing manner.

REFERENCES:
patent: 4993358 (1991-02-01), Mahawili
patent: 5210466 (1993-05-01), Collins et al.
patent: 5226967 (1993-07-01), Chen et al.
patent: 5500256 (1996-03-01), Watabe
patent: 5669976 (1997-09-01), Yuuki et al.

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