Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2007-02-27
2007-02-27
Chen, Bret (Department: 1762)
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
C216S067000
Reexamination Certificate
active
10795296
ABSTRACT:
A plasma processing method, in which a process gas is introduced into an evacuated process chamber for subjecting the target object to a plasma processing. The plasma processing method is featured in that at least a part of the process gas exhausted from the process chamber is introduced again into the process chamber. A specified value is obtained by monitoring the state of the plasma of the process gas within the process chamber, and the introducing conditions of the process gas into the process chamber are controlled to adjust a predetermined property value to a regulated value.
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Ohiwa Tokuhisa
Sakai Itsuko
Chen Bret
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
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