Plasma processing method

Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting

Reexamination Certificate

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Details

C216S067000

Reexamination Certificate

active

10795296

ABSTRACT:
A plasma processing method, in which a process gas is introduced into an evacuated process chamber for subjecting the target object to a plasma processing. The plasma processing method is featured in that at least a part of the process gas exhausted from the process chamber is introduced again into the process chamber. A specified value is obtained by monitoring the state of the plasma of the process gas within the process chamber, and the introducing conditions of the process gas into the process chamber are controlled to adjust a predetermined property value to a regulated value.

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