Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-08-09
2005-08-09
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S712000, C438S717000, C438S723000, C438S724000, C438S725000
Reexamination Certificate
active
06927173
ABSTRACT:
Because of environmental pollution prevention laws, PFC (perfluorocarbon) and HFC (hydrofluorocarbon), both etching gases for silicon oxide and silicon nitride films, are expected to be subjected to limited use or become difficult to obtain in the future. An etching gas containing fluorine atoms is introduced into a plasma chamber. In a region where plasma etching takes place, the fluorine-containing gas plasma is made to react with solid-state carbon in order to produce molecular chemical species such as CF4, CF2, CF3and C2F4for etching. This method assures a high etch rate and high selectivity while keeping a process window wide.
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Mori Masahito
Tachi Shinichi
Yokogawa Ken'etsu
Antonelli Terry Stout & Kraus LLP
Norton Nadine G.
Renesas Technology Corp.
Tran Binh X.
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