Plasma processing apparatus having high frequency power...

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – Having glow discharge electrode gas energizing means

Reexamination Certificate

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C156S345430, C156S345440, C156S345280, C118S7230ER

Reexamination Certificate

active

07615132

ABSTRACT:
A plasma processing apparatus suitable for high-speed and high-definition etching is provided. By applying to a wafer chucking electrode9a voltage waveform in which an absolute value of high frequency voltage increases with time and switching between a positive voltage and a negative voltage occurs, a rectangular high frequency voltage is caused to be generated in the wafer10, with the result that the duty ratio of the rectangular high frequency voltage decreases and that the high energy ion ratio in the energy distribution of ions incident on the wafer increases. Therefore, high efficiency and high accuracy etching becomes possible, providing the advantage that the material selection ratio is improved.

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