Plasma processing apparatus for producing plasma at low electron

Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Plasma generating

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

31511121, 31511141, 216 70, 216 71, 118723I, 20429834, 20429806, H05B 3700

Patent

active

059363525

ABSTRACT:
A plasma processing apparatus includes a plasma chamber and an antenna formed by a first set of parallel antenna elements and a second set of parallel antenna elements, the antenna elements of the first set being interdigitally arranged with those of the second set. An energy source supplies oscillation energy of first phase to the first set of antenna elements and oscillation energy of second, opposite phase to the second set of antenna elements to produce oppositely moving energy fields in the chamber at such a frequency that electrons are confined in a plasma produced in the chamber.

REFERENCES:
patent: 5397962 (1995-03-01), Moslehi
patent: 5401350 (1995-03-01), Patrick et al.
patent: 5464476 (1995-11-01), Gibb et al.
patent: 5565738 (1996-10-01), Samukawa et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Plasma processing apparatus for producing plasma at low electron does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing apparatus for producing plasma at low electron, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus for producing plasma at low electron will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1123003

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.