Plasma processing apparatus and plasma processing method

Details Plasma processing apparatus and plasma processing method Plasma processing apparatus and plasma processing method

2005-06-07

2005-06-07

Kornakov, M. (Department: 1746)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S063000, C216S064000, C216S067000, C156S345470, C156S345510, C438S710000, C438S729000

Reexamination Certificate

active

06902683

ABSTRACT:
A method of plasma-processing is provided which includes placing a sample on one of electrodes provided in a vacuum processing chamber and holding the sample onto the electrodes by an electrostatic attracting force. A processing gas is introduced into an environment in which said sample is placed, and the environment is evacuated to a pressure condition for processing said sample. The processing gas is then formed into a plasma under the pressure condition, the sample is processed by the plasma, and a pulse bias voltage having a pulse cycle of 0.1 μm to 10 μm is applied to the sample.

REFERENCES:
patent: 4822450 (1989-04-01), Davis et al.
patent: 4859908 (1989-08-01), Yoshida et al.
patent: 4918031 (1990-04-01), Flamm et al.
patent: 5210055 (1993-05-01), Nakaguma et al.
patent: 5210466 (1993-05-01), Collins et al.
patent: 5223457 (1993-06-01), Mintz et al.
patent: 5300460 (1994-04-01), Collins et al.
patent: 5312778 (1994-05-01), Collins et al.
patent: 5378311 (1995-01-01), Nagayama et al.
patent: 5387893 (1995-02-01), Oguriyama et al.
patent: 5423941 (1995-06-01), Komura et al.
patent: 5431769 (1995-07-01), Kisakibaru et al.
patent: 5587038 (1996-12-01), Cecchi et al.
patent: 5607542 (1997-03-01), Wu et al.
patent: 5609720 (1997-03-01), Lenz et al.
patent: 5614060 (1997-03-01), Hanawa
patent: 5708250 (1998-01-01), Benjamin et al.
patent: 5779925 (1998-07-01), Hashimoto et al.
patent: 5900103 (1999-05-01), Tomoyasu et al.
patent: 5915562 (1999-06-01), Nyseth et al.
patent: 5916820 (1999-06-01), Okumura et al.
patent: 5935373 (1999-08-01), Koshimizu
patent: 5944902 (1999-08-01), Redeker et al.
patent: 6074518 (2000-06-01), Imafuku et al.
patent: 6077384 (2000-06-01), Collins et al.
patent: 6106737 (2000-08-01), Tomoyasu et al.
patent: 6114662 (2000-09-01), Guidotti et al.
patent: 6217705 (2001-04-01), Tamura et al.
patent: 6312525 (2001-11-01), Bright et al.
patent: 6332425 (2001-12-01), Kofuji et al.
patent: 0421430 (1991-04-01), None
patent: 06-65306 (1995-08-01), None
patent: 0669637 (1995-08-01), None
patent: 0710056 (1996-05-01), None
patent: 6-13480 (1981-02-01), None
patent: 62280378 (1987-12-01), None
patent: 62-287071 (1987-12-01), None
patent: 2-312231 (1990-12-01), None
patent: 3-204925 (1991-09-01), None
patent: 03-291928 (1991-12-01), None
patent: 05-114583 (1993-05-01), None
patent: 05-206072 (1993-08-01), None
patent: 06-013344 (1994-01-01), None
patent: 06-021010 (1994-01-01), None
patent: 6-61182 (1994-03-01), None
patent: 06-112171 (1994-04-01), None
patent: 06-151367 (1994-05-01), None
patent: 06-163462 (1994-06-01), None
patent: 06-224154 (1994-08-01), None
patent: 06-252097 (1994-09-01), None
patent: 07-153743 (1995-06-01), None
patent: 7-297175 (1995-11-01), None
patent: 7-288195 (1996-10-01), None
patent: 8-255787 (1996-10-01), None
A.Grill. Cold Plasma in Materials Fabrication.IEEE Press, 1994. Pges. 88, 93, 94.
Dictionary of Electronics. Pulse width reference.
Abstract of JP—63-050025.
Abstract of JP—06-333850.
Abstract of JP—06-342698.
Abstract of JP—08-074159.
Patent Abstracts of Japan, vol. 095, No. 002, Mar. 31, 1995 of JP 6-314660A.
Oda et al., “Generation of Electron Cyclotron Resonance Plasma in the VHF Band”, Japan se Journal of Applied Physics, vol. 28, No. 10, Oct. 1989.

Affiliated with

Also associated with

Rating

Plasma processing apparatus and plasma processing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing apparatus and plasma processing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus and plasma processing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3520255