Plasma processing apparatus and plasma processing method

Details Plasma processing apparatus and plasma processing method Plasma processing apparatus and plasma processing method

2011-06-07

2011-06-07

Culbert, Roberts (Department: 1716)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S071000, C438S710000, C134S001100

Reexamination Certificate

active

07955514

ABSTRACT:
A plasma processing apparatus having a processing chamber and a sample base, and processing a sample by using plasma generated inside the processing chamber, the processing chamber being located inside a vacuum container, the sample base being located inside the processing chamber, the sample being mounted on the sample base, the plasma processing apparatus including a component member configuring inner-side wall surface of the processing chamber, and having a dielectric portion on the inner-side wall surface, an exhaustion unit for exhausting the inside of the processing chamber, and an electric-field supply unit for supplying an electric field to the component member in a state where the plasma will not be generated inside the processing chamber, wherein magnitude of the electric field supplied from the electric-field supply unit is changed rapidly while exhausting the inside of the processing chamber by the exhaustion unit.

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patent: 03-147317 (1991-06-01), None
patent: 2005-101539 (2005-04-01), None
patent: 2005-116821 (2005-04-01), None

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