Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1996-03-08
1999-02-23
Campbell, Eggerton A.
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
216 70, 156345, 118723MR, 118723MA, B44C 122, C23F 102, C23C 1600
Patent
active
058740120
ABSTRACT:
A plasma processing apparatus is provided. In the apparatus, an inside surface of a process chamber is prevented from having its quality varied or becoming a heavy metal contamination source by plasma in the chamber, and at the same time the plasma characteristic is stabilized over time. In a plasma processing apparatus including a plasma generating unit, a process chamber capable of having its inside pressure reduced, a gas supply system for supplying a gas to the process chamber, a sample table for holding a sample and a vacuum pumping system, the process chamber has an outer cylinder capable of withstanding depressurization and an inner cylinder arranged inside the outer cylinder and being spaced therefrom through a gap, and a heater and a temperature control are provided in the outer cylinder. A non-magnetic metallic material not containing heavy metals, or ceramic, carbon, silicon or quartz is used for the inner cylinder. The temperature of the inner cylinder is controlled to a desired value by heating the outer cylinder using the heater and the temperature control. By controlling the temperature of the inner cylinder to, for example, 100.degree. C. to 350.degree. C., the surface temperature of the inner cylinder can be maintained at a desired value.
REFERENCES:
patent: 5478429 (1995-12-01), Komino et al.
patent: 5651826 (1997-07-01), Takagi
Hamasaki Ryoji
Ito Satoshi
Kanai Saburo
Okamura Kouichi
Takahashi Kazue
Campbell Eggerton A.
Hitachi , Ltd.
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