Plasma processing apparatus and method with controlled...

Details Plasma processing apparatus and method with controlled... Plasma processing apparatus and method with controlled...

2005-04-05

2005-04-05

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C134S001100, C134S022100, C438S710000, C438S714000

Reexamination Certificate

active

06875366

ABSTRACT:
Processing technique using plasma to process the surface of a sample such as semiconductor device. The phases of RF bias voltages applied to a substrate electrode and an antenna electrode opposed thereto are controlled to be opposite to each other so that either one of the electrodes is forced to always function as ground. Therefore, the current flowing to cross the magnetic field for controlling the plasma is decreased, and the potential distribution difference in the surface of the sample to be processed is reduced, so that the charging damage can be suppressed. Energy of ions incident to the sample to be processed can be controlled to perform high-precision etching. The plasma potential can also be controlled so that the strength of the ion impact to the inner wall of the chamber can be reduced, thereby reducing particles detached from the inner wall of the processing apparatus to improve the throughput.

REFERENCES:
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“Introduction to Plasma Physics and Controlled Fusion”, by F. F. Chen, published by Plenum Press, pp. 169-172, 1974.

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