Plasma processing apparatus and method

Details Plasma processing apparatus and method Plasma processing apparatus and method

1997-07-14

1999-01-12

Powell, William

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

156345, 216 69, 216 70, 438728, B44C 122

Patent

active

058582592

ABSTRACT:
A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber.

REFERENCES:
patent: 4125431 (1978-11-01), Fowler
patent: 4354999 (1982-10-01), Priest
patent: 4430138 (1984-02-01), Suzuki
patent: 4434188 (1984-02-01), Kamo et al.
patent: 4559100 (1985-12-01), Ninomiya et al.
patent: 4609428 (1986-09-01), Fujimura
patent: 4727293 (1988-02-01), Asmussen
patent: 4778561 (1988-10-01), Ghanbari
patent: 4926791 (1990-05-01), Hirose et al.
patent: 4960073 (1990-10-01), Suzuki et al.
patent: 4973883 (1990-11-01), Hirose et al.
patent: 5039548 (1991-08-01), Hirose et al.
Bachmann et al., "Emerging Technology of Diamond Thin Films" (pp. 24,32) May 15, 1989 C&EN.
Y. Arnal et al. "Plasma Etching in Magnetic Multipole Microwave Discharge" Appl. Phys. Lett 45(2) 15 Jul. 1984, pp. 132-134.
"ECR Type Ion Source", Proc. 10th Symp. on ISIAT '86. (Tokyo, 1986), pp. 117-120 by M. Tamba, Y. Ishibe and Y. Sakamoto.
"An Optimum Condition of Multipole Field for an ECR-Type Ion Source", Jap. Journal of Appl. Phys., vol. 25, No. 9, Sep. 1986 by Ishii et al., pp. L712-L715.
"Suppression of Noise in a Discharge Tube by a Minimum-B Type Magnet", Jap. Journal of Appl. Phys., vol. 27, No. 2, Feb. 1988, by Hiroshi Amemiya, pp. 297-301.

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